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Incorporating relativistic physics into quantum tunneling can lead to exotic behavior such as perfect transmission through Klein tunneling. Here, we probed the tunneling properties of spin-momentum-locked relativistic fermions by designing and implementing a tunneling geometry that uses nanowires of the topological Kondo insulator candidate samarium hexaboride. The nanowires are attached to the end of scanning tunneling microscope tips and used to image the bicollinear stripe spin order in the antiferromagnet Fe_1.03Te with a Neel temperature of about 50 kelvin. The antiferromagnetic stripes become invisible above 10 kelvin concomitant with the suppression of the topological surface states in the tip. We further demonstrate that the direction of spin polarization is tied to the tunneling direction. Our technique establishes samarium hexaboride nanowires as ideal conduits for spin-polarized currents. 

Spin chains in solid state materials are quintessential quantum systems with potential applications in spin-based logic, memory, quantum communication, and computation. A critical challenge is the experimental determination of spin lifetimes with the ultimate goal of increasing it. Local measurements by scanning tunneling microscopy (STM) have demonstrated the importance of decoupling spins from their environment, with markedly improved lifetimes in spin chains on the surfaces of band insulators. In this work we use low-temperature scanning tunneling microscopy to reveal long-lifetime excitations in a chain of spin-1/2 electrons embedded in a charge density wave Mott insulator, 1T-TaS 2 . Naturally occurring domain walls trap chains of localized spin-1/2 electrons in nearby sites, whose energies lie inside the Mott gap. Spin-polarized measurements on these sites show distinct two-level switching noise, as well as negative differential resistance in the dI/dV spectra, typically associated with spin fluctuations. The excitations show exceptionally long lifetimes of a few seconds at 300 mK. Our work suggests that layered Mott insulators in the chalcogenide family, which are amenable to exfoliation and lithography, may provide a viable platform for quantum applications.